Published October 30, 2015 | Version v1
Journal article

Structural and chemical characterization of novel NixZn1−xGa2O4 nanocatalysts at atomic resolution

  • 1. National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)
  • 2. Department of Materials Science and Engineering of Zhejiang University, Zhejiang University, Hangzhou 310027 (China)

Description

NixZn1−xGa2O4 has already been demonstrated as a noteworthy example of potentially useful catalytic properties such as NOx reduction. In our previous work, it was interesting to find out that the operating temperature of NiGa2O4 catalyst in NOx reduction can be tuned by simple chemical substitution of Ni2+ by Zn2+. It is believed that the mechanism behind such stoichiometry-dependence on operating temperature should be strongly correlated with microstructure, surface morphology as well as the local composition of the nanocatalysts. In the present investigation, NixZn1−xGa2O4 solid solution was synthesized via a hydrothermal ion-exchange reaction, using NaGaO2 and the corresponding acetic salts as the starting materials. By means of a state-of-the-art aberration corrected STEM and high resolution TEM, the structural and chemical characterization at the atomic scale on the NixZn1−xGa2O4 nanocatalyst was carried out, including the crystal structure, size, morphology, surface structure and local composition. It is found that the catalyst was solid solution and most possible exposed facets may be (1 1 1).

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2015.06.032

Additional details

Identifiers

DOI
10.1016/j.apsusc.2015.06.032;
PII
S0169-4332(15)01365-3;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
353
Journal Page Range
p. 419-424
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.