Structure and electrical properties of BiFeO3 thin films grown on LaNiO3 electrode by chemical solution deposition

BiFeO3 thin films were prepared on LaNiO3 (LNO)-electrodized thermally oxidized silicon substrate by chemical solution deposition method. X-ray diffraction analysis revealed that the well-crystallized BiFeO3 thin films were obtained with no impurity phases. The resultant BiFeO3 thin films were provided with the dense and uniform surface morphology. The dielectric constant and dielectric loss at 10 kHz of BiFeO3 thin film on LNO electrode were 202 and 0.057, respectively. Large double remanent polarization of 90.9 μC/cm2 was observed. Furthermore, the trap-controlled space charge limited conduction mechanisms of the leakage current behavior of BiFeO3 films on LNO electrode was suggested.