Published December 15, 2005 | Version v1
Journal article

Magnetic and electronic phase transitions and magnetoresistance effect in the Pr0.5-xLaxSr0.5MnO3 (x=0.10, 0.15) system

  • 1. College of Material Science and Engineering, Hunan University, Changsha 410082 (China) and National Laboratory for superconductivity, Institute of Physics, Chinese Academy of Science, P.O. Box, 603, Beijing 100080 (China)
  • 2. National Laboratory for superconductivity, Institute of Physics, Chinese Academy of Science, P.O. Box, 603, Beijing 100080 (China)
  • 3. College of Material Science and Engineering, Hunan University, Changsha 410082 (China)

Description

The electronic and magnetic phase transitions of Pr0.5-xLaxSr0.5MnO3 with x=0.10 and 0.15 were investigated. The M(T) and ρ(T) curves for these samples clearly show transitions from antiferromagnetic insulator to ferromagnetic semiconductor, ferromagnetic metal and finally to paramagnetic semiconductor as the temperature is increased from 5 to 300K. Especially, two obvious protrudent peaks in the magnetoresistance curves MR(T) for these samples were clearly observed in the relative low magnetic field, 1T. One peak appears at around the antiferromagnet-ferromagnet transition temperature TN (∼150K) with MR∼-23%, another occurs at around the ferromagnet-paramagnet transition temperature TC(∼275K ) with MR∼-8.2%. In addition, when the magnetic field was increased, the temperature corresponding to the MR peak at TN shifts to lower temperature while the temperature corresponding to the MR peak at TC is fixed

Additional details

Identifiers

DOI
10.1016/j.physb.2005.09.027;
PII
S0921-4526(05)00987-7;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
370
Journal Issue
1-4
Journal Page Range
p. 99-103
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.