Published 2008
| Version v1
Journal article
Comparison of transient capacitance-spectroscopy methods on self-organized quantum dots
- 1. Institut fuer Angewandte Physik, Universitaet Hamburg (Germany)
- 2. Optoelectronics Research Center, Tampere University of Technology (Finland)
Description
no abstract available
Availability note (English)
Also available online: http://www.dpg-tagungen.de/index_en.htmlAdditional details
Additional titles
- Original title (German)
- Vergleich von transienten Kapazitaetsspektroskopie-Methoden an selbstorganisierten Quantenpunkten
Identifiers
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 43
- Journal Issue
- 1
- Journal Page Range
- [1 p.]
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics Education, History of Physics, Radiation and Medical Physics as well as the Working Groups Equal Opportunities, Industry and Business, Information, Physics and Disarmament, Physics of Socio-economic Systems, Young DPG
- Original Conference Title
- 72. Jahrestagung und DPG (Deutsche Physikalische Gesellschaft e.V.) Fruehjahrstagung der Sektion Kondensierte Materie und den Fachverbaenden: Didaktik der Physik, Geschichte der Physik, Strahlen- und Medizinphysik und den Arbeitskreisen Chancengleichheit, Industrie und Wirtschaft, Information, Physik und Abruestung, Physik Sozio-oekonomischer Systeme, Junge DPG
- Acronym
- 72. annual meeting and DPG (Deutsche Physikalische Gesellschaft e.V.) Spring meeting of the Condensed Matter Section and the Divisions
- Dates
- 25-29 Feb 2008
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 40048718
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CAPACITANCE; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; P STATES; QUANTUM DOTS; S STATES; SPECTRA; SURFACES; TRANSIENTS; TUNNEL EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; ENERGY LEVELS; EPITAXY; EVALUATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY
Optional Information
- Notes
- Session: HL 31.32 Di 16:30