Published May 16, 1980
| Version v1
Journal article
The formation of a high-resistivity layer close to the surface in Si irradiated with electrons at higher temperatures
- 1. Novosibirskij Gosudarstvennyj Univ. (USSR)
- 2. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
The formation of a high-resistivity layer close to the surface in electron irradiated silicon crystals at elevated temperature was studied. The data on the energy levels of the defects forming the layer are also reported
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 59
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K65-K68
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 12587750
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRONS; ENERGY LEVELS; HIGH TEMPERATURE; LAYERS; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; OXYGEN ADDITIONS; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HEAT TREATMENTS; LEPTONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Short note.