Published August 1991
| Version v1
Journal article
ESR of the excited divacancy triplet state in silicon
Creators
- 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.
Description
New ESR spectra of Si-PT4 and Si-PT5 are found in pure high-Ohmic silicon crystals irradiated with 1 MeV electrons. These spectra are observed by a change in microvave photoconductivity of samples during magnetic resonance and result from radiation deffects in the excited triplet states under exposure of crystals to light. A conclusion is made that Si-PT5 spectrum is related to the excited triplet divacancy state; the conclusion is based on the analysis of angular dependence of Si-PT5 and hyperfine structure conditioned by 29Si nuclei
Additional details
Additional titles
- Original title (Russian)
- EhPR возбужденного триплетного состояния дивакансии в кремнии
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 33
- Journal Issue
- 8
- Journal Page Range
- p. 2357-2362.
- ISSN
- 0367-3294
- CODEN
- FTVTAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24009599
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; ELECTRON BEAMS; ELECTRON SPIN RESONANCE; HYPERFINE STRUCTURE; MEV RANGE 01-10; MONOCRYSTALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DISTRIBUTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; MAGNETIC RESONANCE; MATERIALS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; RESONANCE; SEMICONDUCTOR MATERIALS; SEMIMETALS