Published September 2009 | Version v1
Journal article

Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer

  • 1. Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044 (China)
  • 2. School of Sciences, Beijing Jiaotong University, Beijing 100044 (China)

Description

The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = −20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm2/(V·s) and −4.6 V, respectively

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/18/9/062

Additional details

Identifiers

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
18
Journal Issue
9
Journal Page Range
p. 3990-3994
ISSN
1674-1056