Infrared stealth property based on semiconductor (M)-to-metallic (R) phase transition characteristics of W-doped VO₂ thin films coated on cotton fabrics

The infrared stealth fabric was prepared using W-doped VO₂ (M) paints by the coating technology. The thermochromic W-doped VO₂ (M) was synthesized through hydrolysis method and two-step calcinations under N₂ atmosphere. The powders were evaluated by scanning electron microscopy, X-ray diffraction patterns and differential scanning calorimetry. The infrared emissivity of coated cotton fabric was measured by IR-2 Infrared Emissometer, which was as low as 0.752. The low infrared radiation intensity for coated cotton fabric was detected using the infrared imaging systems above the phase temperature of W-doped VO₂ (M). The results indicated that the W-doped VO₂ (M) thin films exhibited thermal infrared stealth performance, which could adapt to the surroundings spontaneously. - Highlights: • The infrared stealth cotton fabric was coated by W-doped VO₂ as the filler. • The emissivity of coated fabric was 0.752. • The abrupt amount in the emissivity of coated fabric was 0.2 in the phase transition. • The infrared stealth cotton fabric was adaptable to the surroundings spontaneously