Photogalvanic effect in a mesoscopic system

The photogalvanic effect ossurring under irradiation of mesoscopic samples of δ-alloyed GaAs with microwave radiation at 6-80 GHz frequuency is detected. The experiment is carried out at 1.6-4.2 K in magnetic fields up to 70 kGs. The photogalvanic effect detected is caused by the absence of the inversion center in the mesoscopic system. Aperiodic oscillations of both magnetoresistance and emf are obtained. Differing from universal fluctuations of conductivity where the mesoscopic contribution is small in comparison with the averaged conductivity the effect detected is totally determined by mesoscopics and it can serve as the method of investigation of mesoscopic properties of conductors of small sizes