Published January 21, 2009 | Version v1
Journal article

Piezoelectric PZT thick films on LaNiO3 buffered stainless steel foils for flexible device applications

  • 1. NIH Transducer Resource Center and Department of Biomedical Engineering, University of Southern California, Los Angeles, CA 90089-1111 (United States)
  • 2. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)
  • 3. Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072 (China)

Description

In this paper, we report on 4.5 μm piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thick films deposited on flexible stainless steel (SS) foils with LaNiO3 (LNO) buffer layers using a ceramic powder/sol-gel solution modified composite method. The polycrystalline thick films show a hysteresis loop at an applied electric field of 900 kV cm-1 with remanent polarization and coercive electric field values of 27 μC cm-2 and 85 kV cm-1, respectively. At 1 kHz, the dielectric constant is 653 and the dielectric loss is 0.052. The leakage current density of the film is lower than 1.55 x 10-5 A cm-2 over the range of 0 to ±150 V. The conduction current shows ohmic behaviour at a low electric field and space-charge-limited current characteristics at a high electric field.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/42/2/025504

Additional details

Identifiers

DOI
10.1088/0022-3727/42/2/025504;
PII
S0022-3727(09)96887-5;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
42
Journal Issue
2
Journal Page Range
[4 p.]
ISSN
0022-3727
CODEN
JPAPBE