Published October 2011
| Version v1
Miscellaneous
Characterization of Indium-doped CdZnTe(CZT) Crystals Grown by 6 Heating Zone Bridgman Method
Creators
- 1. Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)
Description
Cd1-xZnxTe(CZT) crystal is one of the most important wide band gap semiconductor materials for room temperature radiation detectors, especially for gamma rays due to their wide band gap, high atomic number, and their room temperature operability. The performance of the radiation detectors strongly depends on the quality of the crystals, which is dominated by macro- and microstructural defects such as dislocation, sub-grain boundary, crack and Te inclusion. In this paper, the growing method and some of the techniques used to analyze the Crystal's quality are described
Additional details
Publishing Information
- Publisher
- KNS
- Imprint Place
- Daejeon (Korea, Republic of)
- Imprint Title
- Proceedings of the KNS autumn meeting
- Imprint Pagination
- [1 CD-ROM]
- Journal Page Range
- [2 p.]
Conference
- Title
- 2011 autumn meeting of the KNS
- Dates
- 26-28 Oct 2011
- Place
- Kyoungju (Korea, Republic of)
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 43045599
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- CDTE SEMICONDUCTOR DETECTORS; CRYSTALS; DEFECTS; GAMMA RADIATION; PERFORMANCE
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- 7 refs, 4 figs