H/T scaling of the magnetoconductance near the conductor-insulator transition in two dimensions

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form Δσ(Hparallel,T)≡σ(Hparallel,T)-σ(0,T)=f(Hparallel/T) for magnetic fields Hparallel applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions. copyright 1998 The American Physical Society