Published 1996
| Version v1
Book
Mapping high pressure Bridgman Cd0.8Zn0.2Te from Russia
- 1. Hebrew Univ. of Jerusalem (Israel)
- 2. Sandia National Lab., Livermore, CA (United States)
Description
Mapping of single crystals of Cd(1-x)ZnTe (x=0.2) grown in Russia by the high pressure vertical Bridgman method, (HPVBM) under argon pressure of 2 to 10 Mpa was performed using, X-ray fluorescence (XRF), X-ray diffraction (XRD), Photoluminescence (PL) and leakage current uniformity. The crystals were more uniform in Zn composition than US produced material but had a poorer crystallinity and in the best case could only count nuclear radiation. Differences in the material properties between Russian and US material will be described
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (United States)
- Imprint Title
- 1996 IEEE nuclear science symposium - conference record. Volumes 1, 2 and 3
- Imprint Pagination
- 2138 p.
- Journal Page Range
- p. 647-650.
Conference
- Title
- Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference.
- Dates
- 2-9 Nov 1996.
- Place
- Anaheim, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28067281
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CDTE SEMICONDUCTOR DETECTORS; CRYSTAL GROWTH; MAPPING; PHOTOLUMINESCENCE; RADIATION DETECTORS; ZINC COMPOUNDS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; EMISSION; LUMINESCENCE; MEASURING INSTRUMENTS; PHOTON EMISSION; SEMICONDUCTOR DETECTORS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-961123--.