Published November 4, 2011 | Version v1
Journal article

Fast and direct measurements of the electrical properties of graphene using micro four-point probes

  • 1. Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345E, DK-2800 Kongens Lyngby (Denmark)
  • 2. CAPRES A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby (Denmark)

Description

We present measurements of the electronic properties of graphene using a repositionable micro four-point probe system, which we show here to have unique advantages over measurements made on lithographically defined devices; namely speed, simplicity and lack of a need to pattern graphene. Measurements are performed in ambient, vacuum and controlled environmental conditions using an environmental scanning electron microscope (SEM). The results are comparable to previous results for microcleaved graphene on silicon dioxide (SiO2). We observe a pronounced hysteresis of the charge neutrality point, dependent on the sweep rate of the gate voltage; and environmental measurements provide insight into the sensor application prospects of graphene. The method offers a fast, local and non-destructive technique for electronic measurements on graphene, which can be positioned freely on a graphene flake.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/22/44/445702

Additional details

Identifiers

DOI
10.1088/0957-4484/22/44/445702;
PII
S0957-4484(11)99879-1;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
22
Journal Issue
44
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43026344
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; HYSTERESIS; NANOSTRUCTURES; PROBES; SCANNING ELECTRON MICROSCOPY; SENSORS; SILICA; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; ELECTRON MICROSCOPY; MICROSCOPY; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS