Fast and direct measurements of the electrical properties of graphene using micro four-point probes
Creators
- 1. Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345E, DK-2800 Kongens Lyngby (Denmark)
- 2. CAPRES A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby (Denmark)
Description
We present measurements of the electronic properties of graphene using a repositionable micro four-point probe system, which we show here to have unique advantages over measurements made on lithographically defined devices; namely speed, simplicity and lack of a need to pattern graphene. Measurements are performed in ambient, vacuum and controlled environmental conditions using an environmental scanning electron microscope (SEM). The results are comparable to previous results for microcleaved graphene on silicon dioxide (SiO2). We observe a pronounced hysteresis of the charge neutrality point, dependent on the sweep rate of the gate voltage; and environmental measurements provide insight into the sensor application prospects of graphene. The method offers a fast, local and non-destructive technique for electronic measurements on graphene, which can be positioned freely on a graphene flake.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/22/44/445702Additional details
Identifiers
- DOI
- 10.1088/0957-4484/22/44/445702;
- PII
- S0957-4484(11)99879-1;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 22
- Journal Issue
- 44
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43026344
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; HYSTERESIS; NANOSTRUCTURES; PROBES; SCANNING ELECTRON MICROSCOPY; SENSORS; SILICA; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON MICROSCOPY; MICROSCOPY; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS