Published April 1, 2006 | Version v1
Journal article

Relationship between lattice relaxation and electron delocalization in diamond vacancies

  • 1. Department of Physics, Sharif University of Technology, Tehran, 11365-9161 (Iran, Islamic Republic of) and Semiconductor Component Industry, Tehran 19575-199 (Iran, Islamic Republic of)
  • 2. Department of Physics, Sharif University of Technology, Tehran, 11365-9161 (Iran, Islamic Republic of)
  • 3. K.N. Toosi University of Technology, Tehran 19697 (Iran, Islamic Republic of)
  • 4. Islamic Azad University, North Tehran branch, Tehran 19585-466 (Iran, Islamic Republic of)

Description

Single electron wavefunction of a vacancy in diamond lattice has been calculated in different symmetric configurations of the nearest neighbor (NN) atoms. We used ab initio density functional theory (DFT) and unrestricted Hartree-Fock (UHF) cluster methods. The variation of electron or spin localization on NN atoms have been investigated with respect to the lattice relaxation in the ground state of the neutral and negatively charged vacancy. Calculated variations are not symmetric with respect to the sign of the lattice relaxation. We obtain about 90% localization for electronic charge and spin density for the neutral and negatively charged vacancy, respectively. This is in good agreement with electron paramagnetic resonance (EPR) measurements on negatively charged vacancy. We discuss the sign of the lattice relaxation and the limitation in using only semi-empirical potentials for modeling this problem

Additional details

Identifiers

DOI
10.1016/j.physb.2005.12.083;
PII
S0921-4526(05)01471-7;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
376-377
Journal Page Range
p. 324-326
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
23. international conference on defects in semiconductors
Dates
24-29 Jul 2005
Place
Awaji Island (Japan)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.