Published June 2011 | Version v1
Journal article

Special electronic structures and quantum conduction of B/P co-doping carbon nanotubes under electric field using the first principle

  • 1. South China Normal University, Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering (China)

Description

Boron (B)/phosphorus (P)-doped single-wall carbon nanotubes (B-PSWNTs) are studied by using the first-principle method based on density function theory. Mayer bond order, band structure, electrons density and density of states are calculated. It concludes that the B-PSWNTs have special band structure, which is quite different from BN nanotubes, and that metallic carbon nanotubes will be converted to semiconductor due to boron/phosphorus co-doping, which breaks the symmetrical structure. The bonding forms in B-PSWNTs are investigated in detail. Besides, Mulliken charge population and the quantum conductance are also calculated to study the quantum transport characteristics of B-PSWNT hetero-junction. It is found that the position of p–n junction in this hetero-junction will be changed as the applied electric field increase and it performs the characteristics of diode.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Nanoparticle Research
Journal Volume
13
Journal Issue
6
Journal Page Range
p. 2275-2283
ISSN
1388-0764

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43085943
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BORON; BORON NITRIDES; CARBON; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRON DENSITY; ELECTRONIC STRUCTURE; NANOTUBES; PHOSPHORUS; P-N JUNCTIONS; POPULATIONS; SEMICONDUCTOR MATERIALS
Descriptors DEC
BORON COMPOUNDS; ELEMENTS; MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2011 Springer Science+Business Media B.V.