Published September 1997
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The study of influence of the duration of formation of p+-layer on the process of radiation defect production in silicon structures
- 1. AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki
Description
The radiation defects production in silicon p+-structures under electron, proton and neutron irradiation was studied using the method of non-stationary capacity spectroscopy of deep levels. It was shown that independently from p+-formation duration three types of radiation defects were formed: A-centers, E-centers and divacancies. (A.A.D.)
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Additional details
Additional titles
- Original title (Russian)
- Исследование влияния длительности формирования п
Publishing Information
- Imprint Title
- Abstracts of the second Uzbekistan conference on modern problems of nuclear physics
- Imprint Pagination
- 196 p.
- Journal Page Range
- p. 143.
- Report number
- INIS-UZ--040
Conference
- Title
- 2. Uzbekistan conference on modern problems of nuclear physics.
- Dates
- 9-12 Sep 1997.
- Place
- Samarkand (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29000637
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- A CENTERS; E CENTERS; ELECTRON BEAMS; MEV RANGE; NEUTRON FLUENCE; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON; SPECTROSCOPY
- Descriptors DEC
- BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; VACANCIES