Published January 1992 | Version v1
Journal article

High resolution conversion electron spectroscopy of impurities in semiconductors

  • 1. Inst. of Physics, Univ. Aarhus (Denmark)
  • 2. Inst. of Physics, Univ. Zurich (Switzerland)

Description

Measurements of conversion electrons from the outermost valence shell of ion implanted, dilute impurity atoms in semiconductors are described. The measured spectra can be directly related to the local density of states at the probe atoms. Results obtained for Sn and Ge impurities in group IV and III-V semiconductors are compared to theoretical calculations using the LMTO approach. Possible future applications of the method are discussed. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B
Journal Volume
63
Journal Issue
1/2
Series
Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
179-185
ISSN
0168-583X
CODEN
NIMBE

Conference

Title
Symposium B on new materials, physics and technologies for micronic integrated sensors, symposium C on high energy ion implantation, symposium D on ion beam synthesis of compound and element layers and symposium F on nuclear methods in semiconductor physics.
Acronym
Spring meeting of the European Materials Research Society (E-MRS)
Dates
28-31 May 1991.
Place
Strasbourg (France).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
23081903
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
DATA ANALYSIS; ELECTRON SPECTROSCOPY; ENERGY-LEVEL DENSITY; EXPERIMENTAL DATA; GERMANIUM ADDITIONS; IMPURITIES; INTERNAL CONVERSION; SEMICONDUCTOR MATERIALS; SILICON; THEORETICAL DATA; TIN ADDITIONS
Descriptors DEC
CONVERSION; DATA; DECAY; ELEMENTS; INFORMATION; MATERIALS; NUCLEAR DECAY; NUMERICAL DATA; SEMIMETALS; SPECTROSCOPY

Optional Information

Collaborations
ISOLDE Collaboration.