Crystallization behavior and domain structure in textured Pb(Zr0.52Ti0.48)O3 thin films by different annealing processes
- 1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Description
Amorphous Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared on the Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering at room temperature. After rapid thermal annealing (RTA) and conventional furnace annealing (CFA) at different temperatures, the films were transformed into polycrystalline PZT thin films with (111) and (100) orientation, respectively. The phase formation and ferroelectric domains correlated with different orientation were systematically investigated by X-ray diffraction and piezoresponse force microscopy. The results showed that the perovskite PZT crystal with [111] orientation hetero-nucleated preferentially on top of the PtPb intermetallic phase at the PZT/Pt interface during RTA process. It is of interest to find that the domain self-organized into a structure with rounded shape at the early stage of crystallization. While the nucleation of the films treated by CFA dominantly homo-nucleated, thus the (100) orientation grains with minimum surface energy were easy to grow. The texture effects on ferroelectric properties of PZT films were also discussed in relation to the domain structure
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.11.062;
- PII
- S0040-6090(05)02278-9;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 500
- Journal Issue
- 1-2
- Journal Page Range
- p. 138-143
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37115086
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CRYSTALLIZATION; DOMAIN STRUCTURE; FERROELECTRIC MATERIALS; GRAIN ORIENTATION; INTERFACES; INTERMETALLIC COMPOUNDS; MAGNETRONS; NUCLEATION; OZONE; PZT; SILICON OXIDES; SPUTTERING; SURFACE ENERGY; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; DIELECTRIC MATERIALS; DIFFRACTION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ENERGY; EQUIPMENT; FILMS; FREE ENERGY; HEAT TREATMENTS; LEAD COMPOUNDS; MATERIALS; MICROSTRUCTURE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SCATTERING; SILICON COMPOUNDS; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONATES; ZIRCONIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.