Published April 3, 2006 | Version v1
Journal article

Crystallization behavior and domain structure in textured Pb(Zr0.52Ti0.48)O3 thin films by different annealing processes

  • 1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Description

Amorphous Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared on the Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering at room temperature. After rapid thermal annealing (RTA) and conventional furnace annealing (CFA) at different temperatures, the films were transformed into polycrystalline PZT thin films with (111) and (100) orientation, respectively. The phase formation and ferroelectric domains correlated with different orientation were systematically investigated by X-ray diffraction and piezoresponse force microscopy. The results showed that the perovskite PZT crystal with [111] orientation hetero-nucleated preferentially on top of the PtPb intermetallic phase at the PZT/Pt interface during RTA process. It is of interest to find that the domain self-organized into a structure with rounded shape at the early stage of crystallization. While the nucleation of the films treated by CFA dominantly homo-nucleated, thus the (100) orientation grains with minimum surface energy were easy to grow. The texture effects on ferroelectric properties of PZT films were also discussed in relation to the domain structure

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.11.062;
PII
S0040-6090(05)02278-9;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
500
Journal Issue
1-2
Journal Page Range
p. 138-143
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.