Published 1988 | Version v1
Book

Heteroepitaxial growth of CdTe on GaAs (100)

  • 1. Laboratoire de Physique des Solides, CNRS, Meudon (France)
  • 2. Centre d'Etudes nucleaires, Grenoble (France)
  • 3. Lab. de Spectrometrie Physique, Univ. Joseph Fourier, CNRS, Grenoble (France)

Description

MBE conditions to obtain three Te-precursor surfaces for CdTe growth on (100) GaAs substrate and their detailed XPS studies are reported: one GaAs (6x1)/sub 100/-Te reconstructed surface leading to (100) growth and two reconstructed surfaces, a (6x1)/sub 111/ and a so-called (√3x3), both inducing a (111) growth. These surfaces have been characterized by the relative concentrations of three Te-adsorbed states Te/sub As/, Te/sub Ga/ and Te/sub Te/ which are defined by their XPS lines at 573.1, 4=572.5 and 572.2 eV and assigned to Te bound to As, Te bound to Ga and Te-bridges respectively. Such assignments serve as elements to discuss on a model for the heteroepitaxial growth of CdTe on a GaAs (100) substrate

Additional details

Publishing Information

Publisher
SPIE Society of Photo-Optical Instrumentation Engineers.
Imprint Place
Bellingham, WA (USA)
Imprint Title
Growth of compound semiconductor structures
Journal Page Range
p. 2-5.

Conference

Title
Growth of compound semiconductor structures.
Dates
15-16 Mar 1988.
Place
Newport Beach, CA (USA).