Published January 2011 | Version v1
Journal article Metadata-only

Hot electron transport in heterostructures

Creators

  • 1. Semiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius 01108 (Lithuania)
  • 2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya, 194021 St Petersburg (Russian Federation)

Description

The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AlGaAs/InGaAs/AlGaAs double barrier heterostructures by reducing the electron–interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/26/1/014025

Additional details

Identifiers

DOI
10.1088/0268-1242/26/1/014025;
PII
S0268-1242(11)58598-5;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
26
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45010688
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERACTIONS; TRANSISTORS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LEPTONS; MATERIALS; MOBILITY; PARTICLE MOBILITY; PNICTIDES; SEMICONDUCTOR DEVICES