Published December 23, 2011
| Version v1
Journal article
Mechanical vibrations induced resonant breakdown of the Coulomb blockade
Creators
- 1. Novosibirsk State University, Novosibirsk (Russian Federation)
- 2. Institute of Semiconductor Physics, SB RAS, Novosibirsk (Russian Federation)
Description
Influence of forced mechanical vibrations of a suspended single-electron transistor on electron tunneling through the quantum dot limited by the Coulomb blockade is investigated. It is shown that mechanical oscillations of the quantum dot lead to the Coulomb blockade breakdown, shown in sharp resonant peaks in the transistor conductance dependence on the excitation frequency at values corresponding to the mechanical oscillations eigen modes. The observed effect is presumably connected with oscillations of the mutual electrical capacitances between the quantum dot and surrounding electrodes.
Additional details
Identifiers
- DOI
- 10.1063/1.3666420;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1399
- Journal Issue
- 1
- Journal Page Range
- p. 395-396
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 30. international conference on the physics of semiconductors
- Dates
- 25-30 Jul 2010
- Place
- Seoul (Korea, Republic of)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43091055
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BREAKDOWN; CAPACITANCE; COULOMB FIELD; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRONS; EXCITATION; MECHANICAL VIBRATIONS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; QUANTUM DOTS; TRANSISTORS; TUNNEL EFFECT
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ENERGY-LEVEL TRANSITIONS; EPITAXY; FERMIONS; LEPTONS; NANOSTRUCTURES; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES
Optional Information
- Notes
- (c) 2011 American Institute of Physics