Published November 2009 | Version v1
Journal article Metadata-only

Photo-excited carrier relaxation dynamics in InN films

Creators

  • 1. Department of Engineering and Applied Sciences Sophia University 7-1, Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

Description

Photo-excited carrier relaxation dynamics in InN films were investigated using femtosecond transient measurements. We measured two samples with different background carrier densities, and discussed the influence of the carrier densities on the relaxation dynamics. We also found that the slow decay component disappears under the optimized condition because of the effects of equilibrium band filling and bandgap renormalization.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/193/1/012053

Additional details

Identifiers

DOI
10.1088/1742-6596/193/1/012053;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
193
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
16. international conference on electron dynamics in semiconductors, optoelectronics and nanostructures
Acronym
EDISON 16
Dates
24-28 Aug 2009
Place
Montpellier (France)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42029906
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARRIER DENSITY; CHARGE CARRIERS; ELECTRONIC STRUCTURE; ENERGY GAP; EQUILIBRIUM; EXCITATION; FILMS; INDIUM NITRIDES; RELAXATION; TRANSIENTS
Descriptors DEC
ENERGY-LEVEL TRANSITIONS; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES