Non-linear effect on radiation damage of silicon by cluster ion bombardment

Due to the spatial and temporal close proximity of cluster ion bombardment on Silicon, radiation damage of Si due to cluster ions cannot be extrapolated from that of atomic ions. In this paper we overview our recent observations of radiation damage in Si by clusters of C and Au aggregates of up to 10 atoms and 4 atoms respectively. Quantification of damage is made by RBS/channeling. We observed hyper linear radiation damage depending on cluster size. We developed a theoretical interpretation of this observation using a collision cascade overlapping model