Published December 4, 2013 | Version v1
Journal article

The structural parameters of self-assembled quantum dots determined from the optical spectra

  • 1. Department of Engineering, University of Hull, Cottingham Road, Hull, HU6 7RX (United Kingdom)
  • 2. Department of Engineering, University of Hull, Cottingham Road, Hull, HU6 7RX, UK and Department of Physics and Astronomy, University of Sheffield, Hounsfield Road, Sheffield, S3 7RH (United Kingdom)
  • 3. CRHEA-CNRS, Rue Bernard Grégory, 06560 Valbonne (France)

Description

Structural parameters of InGaAs/GaAs self-assembled quantum dots (SAQDs), which were grown using In-flush technique, were deduced using optical spectroscopy combined with computer modeling. The results are in excellent agreement with the experimental data obtained from transmission electron microscopy. The developed approach suggests a promising alternative to structural characterization methods for SAQDs

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1566
Journal Issue
1
Journal Page Range
p. 506-507
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
31. international conference on the physics of semiconductors
Acronym
ICPS 2012
Dates
29 Jul - 3 Aug 2012
Place
Zurich (Switzerland)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45083132
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; SPECTRA; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; NANOSTRUCTURES; PNICTIDES

Optional Information

Notes
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