Hole distribution in a film of a ferromagnetic semiconductor in the presence of an external electric field

The results of numerical calculations for the mathematical model proposed for describing the magnetization in a thin film of a ferromagnetic semiconductor at temperatures below the Curie temperature in the presence of an external electric field are presented. The theoretical prediction of the existence of a piecewise continuous solution, which describes the presence of the phase transition boundary for magnetization inside the film, is confirmed. The location of this phase transition boundary depends on the external electric field and temperature. (paper)