Crystallographic and optical properties of CuSbS2 and CuSb(S1-xSex)2 solid solution
Creators
Description
We synthesized CuSbS2 (CAS), CuSbSe2 (CASe), and their solid solutions by only a mechanochemical process. CAS powder with good crystallinity was obtained by post-heating at 400 and 500 °C. CASe powder with good crystallinity was obtained by post-heating at 400 and 450 °C. The CuSb(S1-xSex)2 (CASSe) solid solutions with 0.0 ≤ x ≤ 1.0 were synthesized by post-heating at 450 °C. The crystal structure of CASSe was analyzed by Rietveld refinement using X-ray diffraction data. CAS, CASe, and CASSe solid solutions have a chalcostibite structure with an orthorhombic system of space group (Pnma). Both indirect and direct band gap energies of CASSe solid solutions were estimated by the diffuse reflectance spectra of ultraviolet/visible/near-infrared (UV-vis-NIR) spectroscopy. The indirect band gap of the CASSe solid solution linearly decreased from 1.40 eV of CuSbS2 (x = 0.0) to 1.04 eV of CuSbSe2 (x = 1.0). The direct band gap of the CASSe solid solution linearly decreased from 1.45 eV of CuSbS2 (x = 0.0) to 1.08 eV of CuSbSe2 (x = 1.0). CuSbS0.8Se1.2 (x = 0.6) and CuSbS0.4Se1.6 (x = 0.8) had a suitable band gap of about 1.15 eV for an absorber material of a high-efficiency thin-film polycrystalline solar cell. - Highlights: • We synthesized CuSbS2 and CuSbSe2 by only a mechanochemical process. • The CuSb(S1-xSex)2 solid solutions were synthesized by post-heating at 450 °C. • Indirect and direct band gaps of CuSb(S1-xSex)2 solid solutions were estimated. • Indirect and direct band gaps of CuSbS2 were 1.40 and 1.45 eV, respectively. • Indirect and direct band gaps of CuSbSe2 were 1.04 and 1.08 eV, respectively
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2014.11.029Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2014.11.029;
- PII
- S0040-6090(14)01131-6;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 582
- Journal Page Range
- p. 263-268
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Thin-film chalcogenide photovoltaic materials
- Acronym
- E-MRS 2014 spring meeting symposium A
- Dates
- 26-30 May 2014
- Place
- Lille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47033284
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIMONY COMPOUNDS; COPPER COMPOUNDS; CRYSTALLOGRAPHY; EFFICIENCY; EV RANGE; HEATING; OPTICAL PROPERTIES; ORTHORHOMBIC LATTICES; POLYCRYSTALS; SELENIUM COMPOUNDS; SOLAR CELLS; SOLID SOLUTIONS; SPACE GROUPS; SPECTRA; SULFUR COMPOUNDS; THIN FILMS; ULTRAVIOLET RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; DIRECT ENERGY CONVERTERS; DISPERSIONS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; EQUIPMENT; FILMS; HOMOGENEOUS MIXTURES; MIXTURES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SOLAR EQUIPMENT; SOLUTIONS; SYMMETRY GROUPS; THREE-DIMENSIONAL LATTICES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.