Published 1979 | Version v1
Journal article Metadata-only

Thermal oxidation of silicon with two oxidizing species

Creators

  • 1. Fabrica de Componente Pasive si Aparate cu Semiconductori, Baneasa, Bucharest (Romania)

Description

A theoretical model for the thermal oxidation of silicon in wet oxygen is presented. It is shown that the presence of oxygen in the oxidation furnace has an important effect when the water temperature is not too high (less than about 65 deg C). The model is in good agreement with the experimental data. (author)

Additional details

Publishing Information

Journal Title
Rev. Roum. Phys.
Journal Volume
24
Journal Issue
6
Series
Rev. Roum. Phys.
Journal Page Range
607-615
ISSN
0035-4090

INIS

Country of Publication
Romania
Country of Input or Organization
Romania
INIS RN
11567048
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S99: GENERAL AND MISCELLANEOUS;
Descriptors DEI
ACTIVATION ENERGY; COMPUTER CODES; MATHEMATICAL MODELS; OXIDATION; SILICON; THICKNESS
Descriptors DEC
CHEMICAL REACTIONS; DIMENSIONS; ELEMENTS; ENERGY; SEMIMETALS