Development of multi-ring semiconductor detectors

A multi-ring semiconductor detector has been developed for the measurements of the angular distributions of nuclear reactions induced by secondary ion beams in inverse kinematics. The advantages of the multi-ring detector are generally discussed and the manufacturing procedure is presented. The detector has 11 independent rings forming a φ100 mm silicon wafer with the thickness of 300 μm. A φ7 mm hole is cut in the center in order to avoid recording the beam at 0 degree directly. The active area and the energy resolution of each ring are typically 450 mm2 and 32 keV in FWHM (5.156 MeV α particles), respectively. The detector is used in the angular distribution measurement of 11C(d, n)12N reaction and the performance is briefly described. (author)