Published August 1981
| Version v1
Journal article
Variation of charge-carrier lifetime in Hgsub(1-x)Cdsub(x)Te under electron irradiation and following annealing
- 1. Tomskij Gosudarstvennyj Univ. (USSR). Sibirskij Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Изменение времени жизни носителей заряда в Хгсуб(1-x)Cдсуб(x)Те при электронном облучении и последующем отжиге
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 15
- Journal Issue
- 8
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1606-1608
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 13660361
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CADMIUM COMPOUNDS; CHARGE CARRIERS; ELECTRON DENSITY; ELECTRONS; LIFETIME; LOW TEMPERATURE; MEDIUM TEMPERATURE; MERCURY TELLURIDES; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; LEPTONS; MERCURY COMPOUNDS; MEV RANGE; RADIATION EFFECTS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Semiconductors (USA).