Published January 1980
| Version v1
Journal article
Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status report
Description
A critical review of recent studies of the geometrical and electronic structure of the Si(001) and Si(111) surfaces is given. Emphasis is placed on low-energy electron diffraction (LEED) studies of the geometrical structure, photoelectron spectroscopy studies of the electronic structure, and theoretical studies of the electronic and geometric structure of the Si(111)--(2 x 1), Si(111)--(7 x 7), Si(111)--(1 x 1)X, and Si(001)--(2 x 1) surfaces
Additional details
Publishing Information
- Journal Title
- J. Vac. Sci. Technol.
- Journal Volume
- 17
- Journal Issue
- 1
- Series
- J. Vac. Sci. Technol.
- Journal Page Range
- 492-500
- ISSN
- 0022-5355
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11551789
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL STRUCTURE; DOMAIN STRUCTURE; ELECTRICAL INSULATORS; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; HELIUM IONS; INTEGRATED CIRCUITS; METALS; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; SILICON; SURFACE TENSION; SURFACES; VARIATIONAL METHODS
- Descriptors DEC
- CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL EQUIPMENT; ELECTRON SPECTROSCOPY; ELECTRONIC CIRCUITS; ELEMENTS; IONS; SCATTERING; SEMIMETALS; SPECTROSCOPY; SURFACE PROPERTIES