Published August 2006 | Version v1
Journal article

Fracture characterization in patterned thin films by cross-sectional nanoindentation

  • 1. CEIT and TECNUN (University of Navarra), P. Manuel Lardizabal 15, 20018 San Sebastian (Spain)
  • 2. Logic Technology Development, Intel Corporation, Hillsboro, OR 97124 (United States)

Description

A testing technique based on cross-sectional nanoindentation has been used to assess the mechanical reliability of interconnect structures. A Berkovich indenter was used to initiate fracture in a silicon substrate and cracks propagated through the structure. To better control crack growth and to convert the problem into two dimensions, a trench parallel to the indentation surface was previously machined using a focused ion beam. The crack lengths obtained for different material systems in the interconnect structure correlate well with the fracture energies measured for the same materials in blanket films. Finite element model simulations incorporating cohesive elements have been used to model the fracture processes and to explain the different cracking behaviour observed

Additional details

Identifiers

DOI
10.1016/j.actamat.2006.03.027;
PII
S1359-6454(06)00237-0;

Publishing Information

Journal Title
Acta Materialia
Journal Volume
54
Journal Issue
13
Journal Page Range
p. 3453-3462
ISSN
1359-6454
CODEN
ACMAFD

Conference

Title
Modeling, simulation and experiments
Acronym
Meeting on micromechanics and microstructure evolution
Dates
11-16 Sep 2005
Place
Madrid (Spain)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38036965
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRACK PROPAGATION; CRACKS; FINITE ELEMENT METHOD; FRACTURES; INTERFACES; ION BEAMS; SILICON; SIMULATION; SURFACES; THIN FILMS
Descriptors DEC
BEAMS; CALCULATION METHODS; ELEMENTS; FAILURES; FILMS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.