Fracture characterization in patterned thin films by cross-sectional nanoindentation
Creators
- 1. CEIT and TECNUN (University of Navarra), P. Manuel Lardizabal 15, 20018 San Sebastian (Spain)
- 2. Logic Technology Development, Intel Corporation, Hillsboro, OR 97124 (United States)
Description
A testing technique based on cross-sectional nanoindentation has been used to assess the mechanical reliability of interconnect structures. A Berkovich indenter was used to initiate fracture in a silicon substrate and cracks propagated through the structure. To better control crack growth and to convert the problem into two dimensions, a trench parallel to the indentation surface was previously machined using a focused ion beam. The crack lengths obtained for different material systems in the interconnect structure correlate well with the fracture energies measured for the same materials in blanket films. Finite element model simulations incorporating cohesive elements have been used to model the fracture processes and to explain the different cracking behaviour observed
Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2006.03.027;
- PII
- S1359-6454(06)00237-0;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 54
- Journal Issue
- 13
- Journal Page Range
- p. 3453-3462
- ISSN
- 1359-6454
- CODEN
- ACMAFD
Conference
- Title
- Modeling, simulation and experiments
- Acronym
- Meeting on micromechanics and microstructure evolution
- Dates
- 11-16 Sep 2005
- Place
- Madrid (Spain)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38036965
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRACK PROPAGATION; CRACKS; FINITE ELEMENT METHOD; FRACTURES; INTERFACES; ION BEAMS; SILICON; SIMULATION; SURFACES; THIN FILMS
- Descriptors DEC
- BEAMS; CALCULATION METHODS; ELEMENTS; FAILURES; FILMS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.