Anisotropy of electrical conductivity of indium selenide

Anisotropy of electric conductivity within 80-400 k temperature region is investigated. It is ascertained that a wide range of anisotropy values, the difference of conductivity mechanisms in different crystallographic directions are conditioned by the effect produced by interlayer uncontrolled or doping additions, deposited on defects of lamellar crystal packing. Thermal treatment in vacuum facilitates the manifestation of three-dimensional character of conductivity zone in InSe by means of destruction of such masses. 18 refs.; 3 figs.; 2 tabs