Published March 2007 | Version v1
Journal article

Effects of nitrogen concentration variation in molybdenum nitride underlayer for spin valves

  • 1. School of Electronic Engineering, Soongsil University, Seoul 156-743l (Korea, Republic of)
  • 2. Semiconductor Devices and Materials Lab. Korea Institute of Science and Technology, P.O. Box 131, Seoul (Korea, Republic of)
  • 3. Department of Nano and Electronic Physics, Kookmin University, Seoul 136-702 (Korea, Republic of)

Description

We have studied magnetic and thermal properties of MoN films with different nitrogen concentrations. When a small amount of nitrogen is incorporated into the Mo-underlayer of a top-type spin valve, we do not observe any significant thermal degradation of its magnetic properties after annealing at 220 deg. C. The magnetoresistance ratio of the as-deposited spin-valve structure is 7.0% and slightly increases to 7.5 % even at the annealing temperature of 220 deg. C. The amount of nitrogen in the MoN underlayer seems to affect the texture growth of NiFe (1 1 1) and to improve the magnetic characteristics of the spin valve. From the XPS analysis of MoN thin films and XRD analysis of NiFe films grown on the MoN underlayer, it is concluded that spin-valve structure grown on the MoN underlayer with N2 gas-flow rate of 5 sccm is more stable than that grown with N2 gas-flow rate of 1 sccm

Additional details

Identifiers

DOI
10.1016/j.jmmm.2006.10.987;
PII
S0304-8853(06)02196-2;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
310
Journal Issue
2
Journal Page Range
p. e977-e979
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
17. international conference on magnetism
Dates
20-25 Aug 2006
Place
Kyoto (Japan)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.