Published 1987
| Version v1
Miscellaneous
The suppression of residual defects of silicon implanted with group III, IV and V elements
Creators
Description
Published in summary form only
Additional details
Publishing Information
- Imprint Title
- Progress Report 1985-1986
- Imprint Pagination
- 180 p.
- Journal Page Range
- p. 35.
- Report number
- INIS-BR--1229
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 19080260
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Progress Report, No Abstract
- Descriptors DEI
- ANNEALING; ARSENIC IONS; CRYSTAL DEFECTS; GERMANIUM IONS; ION IMPLANTATION; PROGRESS REPORT; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; IONS; SEMIMETALS