Electron spin resonance investigation of irradiated Si-SiO2

The point defects of Pb and E' in two kinds of Si-SiO2 formed by different technological process, before and after irradiation with different dosage and bias field, have been examined using electron spin resonance (ESR). The experimental results show that there are Pb defects in both kinds of Si-SiO2 no matter whether they are irradiated, and the radiation of 60Co can generate more Pb defects in the Si-SiO2 systems. In the first kind of Si-SiO2 the E' defects can be observed after irradiation with positive bias field, while with free field these defects appear only when the irradiation dosage is as high as 50 kGy(Si). But there are not any E' in the second kind of Si-SiO2 even if they are irradiated. Besides, the ΔH(peak to peak) of Pb and E' in the ESR spectra indicates that Pb is referred to a slow relaxation defect but E' to a fast relaxation defect. Finally, the experimental results are qualitatively explained