Published 1979
| Version v1
Miscellaneous
Study on location and charged states of oxygen atoms implanted in a silicon monocrystal
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Исследование местоположения и зарядовых состояний атомов кислорода, внедренных в монокристалл кремния
Publishing Information
- Imprint Title
- Preliminary program and summaries of reports of the 10. Conference on problems of charged particle beams using for studying substance composition and properties
- Journal Page Range
- p. 123-124.
- Report number
- INIS-mf--5499
Conference
- Title
- 10. Conference on problem of charged particle beams using for studying substance composition and properties.
- Dates
- 28 - 30 May 1979.
- Place
- Moscow, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 11509590
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- INTERSTITIALS; ION IMPLANTATION; MEV RANGE 10-100; MONOCRYSTALS; OXYGEN IONS; SILICON; SIMULATION
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; ENERGY RANGE; IONS; MEV RANGE; POINT DEFECTS; SEMIMETALS
Optional Information
- Notes
- Short note; 3 refs. Imprint:Predvaritel'naya programma i tezisy dokladov 10. Soveshchaniya po problemam primeneniya puchkov zaryazhennykh chastits dlya izucheniya sostava i svojstv veshchestva.