Published September 29, 2008
| Version v1
Journal article
Electric tunable of electron spin polarization in hybrid magnetic-electric barrier structures
Creators
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)
- 2. Department of Physics, Beihang University, Beijing 100083 (China)
Description
Electron spin-dependent transport properties have been theoretically investigated in two-dimensional electron gas (2DEG) modulated by the magnetic field generated by a pair of anti-parallel magnetization ferromagnetic metal stripes and the electrostatic potential provided by a normal metal Schottky stripe. It is shown that the energy positions of the spin-polarization extremes and the width of relative spin conductance excess plateau could be significantly manipulated by the electrostatic potential strength and width, as well as its position relative to the FM stripes. These interesting features are believed useful for designing the electric voltage controlled spin filters
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physleta.2008.08.042Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2008.08.042;
- PII
- S0375-9601(08)01235-8;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 372
- Journal Issue
- 40
- Journal Page Range
- p. 6216-6220
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40049786
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRONS; MAGNETIC FIELDS; MAGNETIZATION; METALS; POTENTIALS; SCHOTTKY BARRIER DIODES; SPIN; SPIN ORIENTATION; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- ANGULAR MOMENTUM; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; ORIENTATION; PARTICLE PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.