Published August 1985
| Version v1
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Photoelectric effect in surface-barrier structures
Creators
- 1. International Centre for Theoretical Physics, Trieste (Italy)
- 2. AN Belorusskoj SSR, Minsk. Inst. Fiziki
Description
Deviations from the Fowler law were observed when investigating photoelectric emission in p-type ZnTe surface-barrier structures. The revealed peculiarities of the structure photosensitivity spectrum are explained by the electron transitions involving surface states at the metal-semiconductor interface. (author)
Availability note (English)
MF available from INIS under the Report Number.Files
17029363.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 12 p.
- Report number
- IC--85/182
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 17029363
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ENERGY SPECTRA; FOWLER-NORDHEIM THEORY; INDIUM; PHOTODIODES; PHOTOEMISSION; SURFACE BARRIER DETECTORS; SURFACE PROPERTIES; VERIFICATION; VISIBLE RADIATION; ZINC TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; MEASURING INSTRUMENTS; METALS; RADIATION DETECTORS; RADIATIONS; SECONDARY EMISSION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- 23 refs, 4 figs.