Published May 14, 2018 | Version v1
Journal article

Efficient semiconductor multicycle terahertz pulse source

  • 1. Szentágothai Research Centre, University of Pécs, 7624 Pécs (Hungary)
  • 2. Institute of Physics, University of Pécs, 7624 Pécs (Hungary)
  • 3. MTA-PTE High-Field Terahertz Research Group, 7624 Pécs (Hungary)

Description

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6455/aab9ec

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. B, Atomic, Molecular and Optical Physics
Journal Volume
51
Journal Issue
9
Journal Page Range
[7 p.]
ISSN
0953-4075
CODEN
JPAPEH

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52021417
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
ACCELERATION; COMPUTERIZED SIMULATION; GALLIUM PHOSPHIDES; GRATINGS; MODULATION; PARAMETRIC AMPLIFIERS; POTENTIALS; PULSES; SCALING; SEMICONDUCTOR MATERIALS; SPECTROSCOPY
Descriptors DEC
AMPLIFIERS; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SIMULATION