Ordered Ag nanocluster structures by vapor deposition on pre-patterned SiO2
- 1. Helmholtz-Zentrum Dresden Rossendorf (HZDR), Institut fuer Ionenstrahlphysik und Materialforschung, PO Box 510119, 01314 Dresden (Germany)
Description
Highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO2 surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well separated. Computer modeling of the growth has been performed with a lattice-based kinetic Monte Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag adatoms and ∼1 nm square surface migration ranges of Ag adatoms. It is also shown that metal nucleations can trigger even on defect free surfaces. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns. (fast track communication)
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/23/22/222203Additional details
Identifiers
- DOI
- 10.1088/0953-8984/23/22/222203;
- PII
- S0953-8984(11)86831-1;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 23
- Journal Issue
- 22
- Journal Page Range
- [5 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43007362
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ATOMS; CLASSIFICATION; COMPUTERIZED SIMULATION; DEFECTS; LIFETIME; METALS; MIGRATION; MONTE CARLO METHOD; NANOSTRUCTURES; NUCLEATION; PHYSICAL VAPOR DEPOSITION; PROBABILITY; SILICON OXIDES; SILVER; SURFACES; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; DEPOSITION; ELEMENTS; METALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SIMULATION; SURFACE COATING; TEMPERATURE RANGE; TRANSITION ELEMENTS