Published September 13, 2007 | Version v1
Journal article

On the n-p phase transition in CdCr2-xSb xSe4

  • 1. University of Silesia, Institute of Chemistry, ul. Szkolna 9, 40-006 Katowice (Poland)
  • 2. University of Silesia, Institute of Physics, ul. Uniwersytecka 4, 40-007 Katowice (Poland)
  • 3. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okolna 2, 50-422 Wroclaw (Poland)

Description

The electrical conductivity and the thermoelectric power measurements have been done in <0 0 1> direction and in the temperature range from 270 to 500 K for the single crystals with antimony concentration: 0.0 ≤ x ≤ 0.08. The electrical measurements showed that: (1) all single crystals are semiconductors, (2) all samples show typical Arrhenius behaviour of the electrical conductivity with two different energy activations, (3) the crystals with x = 0.06 and 0.08 revealed the n-p phase transitions at lower temperatures: 303 and 337 K, respectively, connected with a competition between the hole and electron conductivities. These effects are interpreted within a framework of the quantum band model including structural defects

Additional details

Identifiers

DOI
10.1016/j.jallcom.2006.08.354;
PII
S0925-8388(07)00270-8;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
442
Journal Issue
1-2
Journal Page Range
p. 186-188
ISSN
0925-8388
CODEN
JALCEU

Conference

Title
15. international conference on solid compounds of transition elements
Acronym
SCTE2006
Dates
15-20 Jul 2006
Place
Cracow (Poland)

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.