Published 1992
| Version v1
Miscellaneous
Silicide formation in Ti/Si under high intensity implantation of As and Kr ions
Creators
Description
Short communication
Additional details
Additional titles
- Original title (Russian)
- Силицидообразование в системе Ти/Си при высокоинтенсивной имплантации ионов Ас и Кр
Publishing Information
- Imprint Title
- Summaries of reports of the 22. conference on physics of charged particle interaction with crystals
- Imprint Pagination
- 135 p.
- Journal Page Range
- p. 78.
- Report number
- INIS-SU--340/A
Conference
- Title
- 22. Conference on physics of charged particle interaction with crystals.
- Original Conference Title
- 22. Soveshchanie po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 25-27 May 1992.
- Place
- Moscow (Russian Federation).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24032247
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ARSENIC IONS; ION IMPLANTATION; KEV RANGE 100-1000; KRYPTON IONS; MICROSTRUCTURE; MIXING; RADIATION DOSES; RADIATION EFFECTS; SYNTHESIS; TITANIUM SILICIDES
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; ENERGY RANGE; IONS; KEV RANGE; SILICIDES; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- Imprint:Tezisy dokladov 22. Soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.