Published March 10, 1999
| Version v1
Journal article
Phase stability in GaxIn(1-x)AsySb(1-y)/GaSb heterostructures
Creators
- 1. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
- 2. Lockheed-Martin, Inc., Schenectady, New York 12301-1072 (United States)
Description
The crystallographic and microstructural characteristics of liquid phase epitaxy lattice-matched InxGa(1-x)AsySb(1-y)/GaSb (100) heterostructures is presented. Using both transmission electron microscopy and high resolution X-ray diffraction, a variety of diffusional based phase transformations in the epitaxial films are observed, including: spinodal decomposition, compositional modulations of the order of 30 nm, and weak long range ordering. These results are interpreted in terms of the possible influence of substrate surface structure on the phase stability of epitaxial layers
Additional details
Identifiers
- DOI
- 10.1063/1.57838;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 460
- Journal Issue
- 1
- Journal Page Range
- p. 535-544
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 4. NREL conference on thermophotovoltaic generation of electricity
- Dates
- 11-14 Oct 1998
- Place
- Denver, CO (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40072992
- Subject category
- S36: MATERIALS SCIENCE; S30: DIRECT ENERGY CONVERSION; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL STRUCTURE; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ANTIMONIDES; LAYERS; LIQUID PHASE EPITAXY; MICROSTRUCTURE; PHASE STABILITY; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; THERMOPHOTOVOLTAIC CONVERSION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CONVERSION; CRYSTAL GROWTH METHODS; DIFFRACTION; DIRECT ENERGY CONVERSION; ELECTRON MICROSCOPY; ENERGY CONVERSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS; STABILITY
Optional Information
- Notes
- (c) 1999 American Institute of Physics.