Measurement of the energy dependence of neutron damage in silicon devices

An experiment is described which measures the permanent degradation of silicon device parameters as a function of neutron energy. The neutron source is a nuclear weapon with time-of-flight giving energy resolution. The neutron spectrum is measured with a dielectric track detector, and 20,000 transistors measure the neutron caused degradation. An integral equation is unfolded to yield the energy dependence of neutron damage