Published January 14, 2013
| Version v1
Journal article
An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate
Creators
- 1. Institute for Energy Technology, Department of Solar Energy, Instituttveien 18, 2008 Kjeller (Norway)
- 2. Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Petersenstrasse 32, D-64287 Darmstadt (Germany)
- 3. SINTEF-Materials and Chemistry Syntesis and Properties, Forskningsveien 1, Pb. 124 Blindern, 0314 Oslo (Norway)
- 4. Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Tamil Nadu, Madurai (India)
- 5. Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, 0316 Oslo (Norway)
Description
The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.
Additional details
Identifiers
- DOI
- 10.1063/1.4774404;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 102
- Journal Issue
- 2
- Journal Page Range
- p. 021606-021606.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44117100
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEPOSITION; INDIUM ADDITIONS; INTERFACES; LAYERS; MAGNETRONS; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; THIN FILMS; TIN; TIN OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; INDIUM ALLOYS; MATERIALS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TIN COMPOUNDS
Optional Information
- Notes
- (c) 2013 American Institute of Physics