Published 1987
| Version v1
Miscellaneous
Sound effects on kinetics of annealing hydrogen implanted into silicon
Description
Diffusion of hydrogen implanted into silicon is characterised by peculiarities, connected with high initial hydrogen concentration: at first rapid diffusion occurs through crystal lattice interstices and then, as the mean hydrogen concentration reduces, interaction with dislocations begins to play a notable role, and diffusion slows down. Possible changes in hydrogen behaviour under a strong sound effect on a crystal are investigated
Additional details
Additional titles
- Original title (Russian)
- Влияние звука на кинетику отжига имплантированного в кремний водорода
Publishing Information
- Imprint Title
- Radiation-induced damage physics and material technology
- Journal Issue
- no. 2(40
- Series
- Voprosy atomnoj nauki i tekhniki.
- Journal Page Range
- p. 14-19.
- Report number
- INIS-SU--41
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 19071771
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMPLITUDES; ANALYTICAL SOLUTION; ANNEALING; DEPTH; DIFFUSION; DISLOCATIONS; HYDROGEN; INTERSTITIALS; ION IMPLANTATION; SILICON; SOUND WAVES; SPATIAL DISTRIBUTION
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELEMENTS; HEAT TREATMENTS; LINE DEFECTS; NONMETALS; POINT DEFECTS; SEMIMETALS
Optional Information
- Notes
- 8 refs.; 1 fig. Imprint:Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.;Nauchno-tekhnicheskij sbornik.