Comparative study of leakage power in CNTFET over MOSFET device

A comparison of the CNTFET device with the MOSFET device in the nanometer regime is reported. The characteristics of both devices are observed as varying the oxide thickness. Thereafter, we have analyzed the effect of the chiral vector and the temperature on the threshold voltage of the CNTFET device. After simulation on the HSPICE tool, we observed that the high threshold voltage can be achieved at a low chiral vector pair. It is also observed that the effect of temperature on the threshold voltage of the CNTFET is negligibly small. After that, we have analyzed the channel length variation and their impact on the threshold voltage of the CNTFET as well as MOSFET devices. We found an anomalous effect from our simulation result that the threshold voltage increases with decreasing the channel length in CNTFET devices; this is contrary to the well known short channel effect. It is observed that at below the 10 nm channel length, the threshold voltage is increased rapidly in the case of the CNTFET device, whereas in the case of the MOSFET device, the threshold voltage decreases drastically. (semiconductor devices)