Published October 25, 2010 | Version v1
Journal article

Growth and structural properties of α-MoO3 (0 1 0) microplates with atomically flat surface

  • 1. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Lavrentieva ave. 13, Novosibirsk 630090 (Russian Federation)
  • 2. Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation)
  • 3. Laboratory of Crystal Chemistry, Institute of Inorganic Chemistry, Lavrentieva ave. 3, Novosibirsk 630090 (Russian Federation)
  • 4. Department of Materials Science and Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)
  • 5. Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)

Description

Microplates of orthorhombic α-MoO3 with atomically flat (0 1 0) surface were grown by thermal recrystallization of intermediate molybdenum oxide used as a precursor. The precursor was obtained by the decomposition at T = 450 deg. C of crystalline molybdenum formate precipitated from ammonium paramolybdate water solution with formic acid. Recrystallization of the precursor crystals at T = 650 deg. C produced crystalline α-MoO3 microplates with a high-quality surface. The crystals grown were characterized by AFM, SEM, XRD and TG/DSC to study their phase composition and microstructure. The results indicate the formation of α-MoO3 microplates with ∼50 μm length, ∼10 μm width and ∼600 nm thickness with well-developed (0 1 0) crystal plane and atomically flat surface.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.mseb.2010.05.016

Additional details

Identifiers

DOI
10.1016/j.mseb.2010.05.016;
PII
S0921-5107(10)00388-0;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
174
Journal Issue
1-3
Journal Page Range
p. 159-163
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
18. international materials research congress: Symposium on advances in semiconducting materials
Acronym
IMRC 2009
Dates
16-20 Aug 2009
Place
Cancun (Mexico)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.