Growth and structural properties of α-MoO3 (0 1 0) microplates with atomically flat surface
Creators
- 1. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Lavrentieva ave. 13, Novosibirsk 630090 (Russian Federation)
- 2. Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation)
- 3. Laboratory of Crystal Chemistry, Institute of Inorganic Chemistry, Lavrentieva ave. 3, Novosibirsk 630090 (Russian Federation)
- 4. Department of Materials Science and Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)
- 5. Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)
Description
Microplates of orthorhombic α-MoO3 with atomically flat (0 1 0) surface were grown by thermal recrystallization of intermediate molybdenum oxide used as a precursor. The precursor was obtained by the decomposition at T = 450 deg. C of crystalline molybdenum formate precipitated from ammonium paramolybdate water solution with formic acid. Recrystallization of the precursor crystals at T = 650 deg. C produced crystalline α-MoO3 microplates with a high-quality surface. The crystals grown were characterized by AFM, SEM, XRD and TG/DSC to study their phase composition and microstructure. The results indicate the formation of α-MoO3 microplates with ∼50 μm length, ∼10 μm width and ∼600 nm thickness with well-developed (0 1 0) crystal plane and atomically flat surface.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2010.05.016Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2010.05.016;
- PII
- S0921-5107(10)00388-0;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 174
- Journal Issue
- 1-3
- Journal Page Range
- p. 159-163
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- 18. international materials research congress: Symposium on advances in semiconducting materials
- Acronym
- IMRC 2009
- Dates
- 16-20 Aug 2009
- Place
- Cancun (Mexico)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43030455
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AQUEOUS SOLUTIONS; ATOMIC FORCE MICROSCOPY; CALORIMETRY; CRYSTAL GROWTH; CRYSTALS; DECOMPOSITION; FORMIC ACID; MICROSTRUCTURE; MOLYBDENUM; MOLYBDENUM OXIDES; MORPHOLOGY; ORTHORHOMBIC LATTICES; PRECURSOR; RECRYSTALLIZATION; SCANNING ELECTRON MICROSCOPY; SUBLIMATION; SURFACES; THICKNESS; X-RAY DIFFRACTION
- Descriptors DEC
- CARBOXYLIC ACIDS; CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; DIMENSIONS; DISPERSIONS; ELECTRON MICROSCOPY; ELEMENTS; EVAPORATION; HOMOGENEOUS MIXTURES; METALS; MICROSCOPY; MIXTURES; MOLYBDENUM COMPOUNDS; MONOCARBOXYLIC ACIDS; ORGANIC ACIDS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SCATTERING; SOLUTIONS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.