Published August 30, 2010 | Version v1
Journal article

Epitaxial growth and magnetic properties of Fe3O4 films on TiN buffered Si(001), Si(110), and Si(111) substrates

  • 1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  • 2. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

Description

Epitaxial Fe3O4 thin films were grown on TiN buffered Si(001), Si(110), and Si(111) substrates by dc reactive sputtering deposition. Both Fe3O4 films and TiN buffer are fully epitaxial when grown at substrate temperatures above 150 deg. C, with textured single phase Fe3O4 resulting from room temperature growth. The initial sputtered Fe3O4 formed nuclei islands and then coalesced to epitaxial columnar grains with increasing film thickness. The magnetization decreases and the coercive field increases with decreasing film thickness. There is no in-plane magnetic anisotropy of epitaxial Fe3O4(001) on Si(001) but Fe3O4 films grown on Si(110) and Si(111) substrates show uniaxial in-plane magnetic anisotropy.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
97
Journal Issue
9
Journal Page Range
p. 092508-092508.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2010 American Institute of Physics